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KM29W32000AT, KM29W32000AIT 4M x 8-Bit NAND Flash Memory

KM29W32000AT Description

KM29W32000AT, KM29W32000AIT Document Title 4M x 8 Bit NAND Flash Memory Revision History w w w Revision No.History 0.0 0.1 Initial issue.Data S.
The KM29W32000A is a 4M(4,194,304)x8bit NAND Flash Memory with a spare 128K(131,072)x8bit.

KM29W32000AT Features

* Voltage Supply : 2.7V ~ 5.5V
* Organization - Memory Cell Array : (4M + 128K)bit x 8bit - Data Register : (512 + 16)bit x8bit
* Automatic Program and Erase - Page Program : (512 + 16)Byte - Block Erase : (8K + 256)Byte - Status Register
* 528-Byte Page Read Operatio

KM29W32000AT Applications

* and also the spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The KM29W32000A is an optimum solution for large nonvolatile storage application such as solid state storage, digital voice recorder, digital still camera and other portable applications requ

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This datasheet PDF includes multiple part numbers: KM29W32000AT, KM29W32000AIT. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
KM29W32000AT, KM29W32000AIT
Manufacturer
Samsung Semiconductor
File Size
382.42 KB
Datasheet
KM29W32000AIT_SamsungSemiconductor.pdf
Description
4M x 8-Bit NAND Flash Memory
Note
This datasheet PDF includes multiple part numbers: KM29W32000AT, KM29W32000AIT.
Please refer to the document for exact specifications by model.

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Samsung Semiconductor KM29W32000AT-like datasheet