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KMM366F400CK - (KMM366F400CK/410CK) DRAM Module

Description

The Samsung KMM366F40(1)0CK is a 4Mx64bits Dynamic RAM high density memory module.

The Samsung KMM366F40(1)0CK consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glassepoxy substrate.

Features

  • Part Identification - KMM366F400CK (4096 cycles/64ms Ref. SOJ) - KMM366F410CK (2048 cycles/32ms Ref. SOJ).
  • New JEDEC standard proposal without buffer.
  • Serial Presence Detect with EEPROM.
  • Extended Data Out Mode Operation.
  • CAS-before-RAS Refresh capability.
  • RAS-only and Hidden refresh capability.
  • LVTTL compatible inputs and outputs.
  • Single +3.3V±0.3V power supply.
  • PCB : Height(1000mil), double sided component PERFOR.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM366F400CK & KMM366F410CK EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM366F40(1)0CK is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(1)0CK consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM366F40(1)0CK is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. KMM366F400CK KMM366F410CK FEATURES • Part Identification - KMM366F400CK (4096 cycles/64ms Ref. SOJ) - KMM366F410CK (2048 cycles/32ms Ref.
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