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KMM366F400CK1 - (KMM366F400CK1/410CK1) DRAM Module

Description

The Samsung KMM366F40(1)0CK1 is a 4Mx64bits Dynamic RAM high density memory module.

The Samsung KMM366F40(1)0CK1 consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glassepoxy substrate.

Features

  • Part Identification - KMM366F400CK1 (4096 cycles/64ms Ref. SOJ) - KMM366F410CK1 (2048 cycles/32ms Ref. SOJ).
  • New JEDEC standard proposal without buffer.
  • Serial Presence Detect with EEPROM.
  • Extended Data Out Mode Operation.
  • CAS-before-RAS Refresh capability.
  • RAS-only and Hidden refresh capability.
  • LVTTL compatible inputs and outputs.
  • Single +3.3V±0.3V power supply.
  • PCB : Height(1000mil), double sided component PERF.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM366F400CK (KMM366F400CK/410CK) DRAM Module
KMM366F410CK (KMM366F400CK/410CK) DRAM Module
KMM366F410CK1 (KMM366F400CK1/410CK1) DRAM Module
KMM366F803CK2 (KMM366F80(8)3CK2) DRAM Module
KMM366F804CS1 DRAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM366F400CK1 KMM366F410CK1 KMM366F400CK1 & KMM366F410CK1 EDO Mode without buffer 4M x 64 DRAM DIMM using 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION The Samsung KMM366F40(1)0CK1 is a 4Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F40(1)0CK1 consists of sixteen CMOS 4Mx4bits DRAMs in SOJ 300mil package and one 1K/2K EEPROM for SPD in 8-pin TSSOP package mounted on a 168-pin glassepoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM366F40(1)0CK1 is a Dual In-line Memory Module and is intended for mounting into 168 pin edge connector sockets. FEATURES • Part Identification - KMM366F400CK1 (4096 cycles/64ms Ref. SOJ) - KMM366F410CK1 (2048 cycles/32ms Ref.
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