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KMM366S823CT - PC100 Unbuffered DIMM

Description

The Samsung KMM366S823CT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung KMM366S823CT consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • CKE ≥ VIH(min), CLK ≤ VIL(max), tCC = ∞ Input signals are stable IOL = 0 mA Page burst 2Banks activated tCCD = 2CLKs tRC ≥ tRC(min) CKE ≤ 0.2V 3 2 760 600 mA 48 16 16 160 80 6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com KMM366S823CT PC100 Unbuffered DIMM Revision History Revision .0 (Aug. 1998) - Eliminated Preliminary DataSheet4U.com DataShee REV. 0 Aug. 1998 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com KMM366S823CT KMM366S823CT SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S823CT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S823CT consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM.