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KMM366S823CTY - Unbuffered DIMM

Description

The Samsung KMM366S823CTY is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung KMM366S823CTY consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • 3 2 600 600 mA 48 16 16 160 80 600 mA 560 1,000 8 mA mA 2 1 mA mA mA Operating current (Burst mode) Refresh current Self refresh current ICC4 et4U. com DataSheet4U. com I.

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Other Datasheets by Samsung Semiconductor

Part Number Description
KMM366S823CT PC100 Unbuffered DIMM
KMM366S823CTF Unbuffered DIMM
KMM366S823CTL Unbuffered DIMM
KMM366S823CTS Unbuffered DIMM
KMM366S823AT SDRAM DIMM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com KMM366S823CTY KMM366S823CTY SDRAM DIMM Preliminary PC100 SDRAM MODULE 8Mx64 SDRAM DIMM based on 8Mx8, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S823CTY is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S823CTY consists of eight CMOS 8M x 8 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each SDRAM. The KMM366S823CTY is a Dual In-line Memory Module and is intended for mounting into 168-pin edge connector sockets. Synchronous design allows precise cycle control with the use of system clock.