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KMM366S824CT - Unbuffered DIMM

Description

The Samsung KMM366S824CT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module.

The Samsung KMM366S824CT consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate.

Features

  • ICC2N mA 1 mA Precharge standby current in non power-down mode ICC2NS Active Standby Current in power-down mode Active standby current in non power-down mode (One bank active) ICC3P ICC3PS ICC3N ICC3NS CKE ≥ V.

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Other Datasheets by Samsung Semiconductor

Part Number Description
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com KMM366S824CT Revision History Revision 0.1 (May. 24, 1999) - Changed "Detail C" in PCB Dimension. PC100 Unbuffered DIMM DataSheet4U.com DataShee Rev. 0.1 May 1999 DataSheet4U.com DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com KMM366S824CT KMM366S824CT SDRAM DIMM PC100 Unbuffered DIMM 8Mx64 SDRAM DIMM based on 4Mx16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION The Samsung KMM366S824CT is a 8M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung KMM366S824CT consists of eight CMOS 4M x 16 bit with 4banks Synchronous DRAMs in TSOP-II 400mil package and a 2K EEPROM in 8-pin TSSOP package on a 168-pin glass-epoxy substrate. Two 0.