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M53233200BJ0-C - (M53233200BE0/BJ0-C) DRAM Module

This page provides the datasheet information for the M53233200BJ0-C, a member of the M53233200BE0 (M53233200BE0/BJ0-C) DRAM Module family.

Datasheet Summary

Description

The Samsung M53233200BE0/BJ0-C is a 32Mx32bits Dynamic RAM high density memory module.

The Samsung M53233200BE0/BJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

Features

  • Part Identification - M53233200BE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53233200BJ0-C(4K cycles/64ms Ref, SOJ, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1420mil), double sided component.

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Datasheet Details

Part number M53233200BJ0-C
Manufacturer Samsung Semiconductor
File Size 555.18 KB
Description (M53233200BE0/BJ0-C) DRAM Module
Datasheet download datasheet M53233200BJ0-C Datasheet
Additional preview pages of the M53233200BJ0-C datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com DRAM MODULE M53233200BE0/BJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept. 1997) M53233200BE0/BJ0-C • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module. et4U.com DataSheet4U.com DataShee DataSheet4U.com DataSheet4 U .com www.DataSheet4U.com DRAM MODULE M53233200BE0/BJ0-C EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung M53233200BE0/BJ0-C is a 32Mx32bits Dynamic RAM high density memory module.
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