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M53233200BJ0-C Datasheet (M53233200BE0/BJ0-C) DRAM Module

Manufacturer: Samsung Semiconductor

Download the M53233200BJ0-C datasheet PDF. This datasheet also includes the M53233200BE0 variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (M53233200BE0_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The Samsung M53233200BE0/BJ0-C is a 32Mx32bits Dynamic RAM high density memory module.

The Samsung M53233200BE0/BJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate.

A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

Overview

www.DataSheet4U.com DRAM MODULE M53233200BE0/BJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) DataSheet4U.com DataShee Revision 0.1 June 1998 DataSheet4U.com DataSheet 4 U .com www.DataSheet4U.com DRAM MODULE Revision History Version 0.0 (Sept.

1997) M53233200BE0/BJ0-C • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col.

addr.) in AC CHARACTERISTICS.

Key Features

  • Part Identification - M53233200BE0-C(4K cycles/64ms Ref, SOJ, Solder) - M53233200BJ0-C(4K cycles/64ms Ref, SOJ, Gold).
  • Extended Data Out Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1420mil), double sided component.

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