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M53233200BJ0-C Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

M53233200BJ0-C datasheet preview

Datasheet Details

Part number M53233200BJ0-C
Datasheet M53233200BJ0-C M53233200BE0 Datasheet (PDF)
File Size 555.18 KB
Manufacturer Samsung Semiconductor
Description (M53233200BE0/BJ0-C) DRAM Module
M53233200BJ0-C page 2 M53233200BJ0-C page 3

M53233200BJ0-C Overview

The Samsung M53233200BE0/BJ0-C is a 32Mx32bits Dynamic RAM high density memory module. The Samsung M53233200BE0/BJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM.

M53233200BJ0-C Key Features

  • Part Identification
  • M53233200BE0-C(4K cycles/64ms Ref, SOJ, Solder)
  • M53233200BJ0-C(4K cycles/64ms Ref, SOJ, Gold)
  • Extended Data Out Mode Operation
  • CAS-before-RAS & Hidden Refresh capability
  • RAS-only refresh capability
  • TTL patible inputs and outputs
  • Single +5V±10% power supply
  • JEDEC standard PDpin & pinout
  • PCB : Height(1420mil), double sided ponent
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