K1S3216BCD memory equivalent, 2mx16 bit page mode uni-transistor random access memory.
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UtRAM
GENERAL DESCRIPTION
The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device s.
The K1S3216BCD is fabricated by SAMSUNG′s advanced CMOS technology using one transistor memory cell. The device support 4 page mode operation, Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The devi.
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