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K3P7U1000B-YC - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

Download the K3P7U1000B-YC datasheet PDF (K3P7V1000B-YC included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 64m-bit (8mx8 /4mx16) cmos mask rom.

Description

The K3P7V(U)1000B-YC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mod

Features

  • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode).
  • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max. )@CL=50pF, 120/40ns(Max. )@C L=100pF 3.0V Operation : 120/40ns(Max. )@CL=100pF 8 Words / 16 Bytes page access.
  • Supply voltage : single +3.0V/ single +3.3V.
  • Current consumption Operating : 60mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K3P7V1000B-YC_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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K3P7V(U)1000B-YC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF, 120/40ns(Max.)@C L=100pF 3.0V Operation : 120/40ns(Max.)@CL=100pF 8 Words / 16 Bytes page access • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 60mA(Max.) Standby : 50µA(Max.
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