K3P7V1000B-YC - 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM

Description

The K3P7V(U)1000B-YC is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 8,388,608 x 8 bit(byte mode) or as 4,194,304 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mod

Features

Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode).
Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max. )@CL=50pF, 120/40ns(Max. )@C L=100pF 3.0V Operation : 120/40ns(Max. )@CL=100pF 8 Words / 16 Bytes page access.
Supply voltage : single +3.0V/ single +3.3V.
Current consumption Operating : 60mA(Max. ) Standby : 50µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.

Samsung Semiconductor

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Datasheet Details

Part number	K3P7V1000B-YC
Manufacturer	Samsung Semiconductor
File Size	66.25 KB
Description	64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM
Datasheet	K3P7V1000B-YC Datasheet

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Full PDF Text Transcription

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K3P7V(U)1000B-YC 64M-Bit (8Mx8 /4Mx16) CMOS MASK ROM FEATURES • Switchable organization 8,388,608 x 8(byte mode) 4,194,304 x 16(word mode) • Fast access time Random Access Time/Page Access Time 3.3V Operation : 100/30ns(Max.)@CL=50pF, 120/40ns(Max.)@C L=100pF 3.0V Operation : 120/40ns(Max.)@CL=100pF 8 Words / 16 Bytes page access • Supply voltage : single +3.0V/ single +3.3V • Current consumption Operating : 60mA(Max.) Standby : 50µA(Max.

Published: Sep 6, 2013 |