Part K4C89323AF
Description DOUBLE DATA RATE Network-DRAM
Manufacturer Samsung Semiconductor
Size 1.31 MB
Samsung Semiconductor
K4C89323AF

Overview

K4C89363AF is a CMOS Double Data Rate Network-DRAM containing 301,989,888 memory cells. K4C89363AF is organized as 2,097,152-words x 4 banks x36 bits.

  • 1 S O p e r a t i n g C u r r e n t ( s i n g l e b a n k ) ( m a x ) ID
  • 2 S P o w e r D o w
  • C u r r e n t ( m a x ) ID
  • 3 S S e l f - R e f r e s h C u r r e n t ( m a x )
  • Fully Synchronous Operation - Double Data Rate (DDR) - Data input/output are synchronized with both edges of DS / QS. - Differential Clock (CLK and C L K ) inputs - C S, FN and all address input signals are sampled on the positive edge of CLK. - Output data (DQs and QS) is aligned to the crossings of CLK and CLK.
  • Fast clock cycle time of 3.0 ns minimum - Clock : 333 MHz maximum - Data : 666 Mbps/pin maximum * * * * * * * *
  • Quad Independent Banks operation Fast cycle and Short Latency Selectable Data Strobe(Uni/Bi-directional data strobe) Distributed Auto-Refresh cycle in 3.9us Self-Refresh Power Down Mode Variabl