K4M28163LH sdram equivalent, mobile sdram.
* 2.5V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.
ORDERING INFORMATION
Part No. K4M28163LH-R(B)N/G/L/F75 K4M28163LH-R(B)N/G/L/F1H K4M28163LH-R(B)N/G/L/F1L
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The K4M28163LH is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4 x 2,098,152 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system .
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