K4M511633C - 8M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

K4M511633C Datasheet Preview — Preview of K4M511633C PDF

Datasheet Details

Part number	K4M511633C
Manufacturer	Samsung semiconductor
File Size	135.96 KB
Description	8M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M511633C_Samsungsemiconductor.pdf

K4M511633C Product details

Description

The K4M511633C is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

📁 K4M511633C Similar Datasheet

K4M511633E - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-C - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-F1H - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-F1L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-F75 - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-L - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-P - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)
K4M511633E-Y - 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA (Samsung)

Other Datasheets by Samsung semiconductor

K4M51163LC - 8M x 16Bit x 4 Banks Mobile SDRAM
K4M51163LE - 8M x 16Bit x 4 Banks Mobile SDRAM
K4M51163PC-x - 8M x 16Bit x 4 Banks Mobile SDRAM
K4M51163PI - 512Mb I-die Mobile SDR SDRAM
K4M513233C - 4M x 32Bit x 4 Banks Mobile SDRAM
K4M51323LC-F - Mobile-SDRAM

Published: Mar 27, 2007 |