K4M56163LG - 2M x 16Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

The K4M56163LG by Samsung semiconductor is a 2M x 16Bit x 4 Banks Mobile SDRAM. Below is the official datasheet preview.

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K4M56163LG 2M x 16Bit x 4 Banks Mobile SDRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4M56163LG** 2M x 16Bit x 4 Banks Mobile SDRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4M56163LG
Manufacturer	Samsung semiconductor
File Size	139.94 KB
Description	2M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M56163LG_Samsungsemiconductor.pdf
Additional preview pages of the K4M56163LG datasheet.

K4M56163LG Product details

Description

The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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Published: Mar 16, 2007 |