K4M56163LG Datasheet 2M x 16Bit x 4 Banks Mobile SDRAM

Manufacturer: Samsung Semiconductor

K4M56163LG 2m x 16bit x 4 banks mobile sdram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K4M56163LG
Manufacturer	Samsung Semiconductor
File Size	139.94 KB
Description	2M x 16Bit x 4 Banks Mobile SDRAM
Datasheet	K4M56163LG Datasheet

General Description

The K4M56163LG is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Overview

www.DataSheet4U.com K4M56163LG - R(B)N/G/L/F 2M x 16Bit x 4 Banks Mobile SDRAM in.

Key Features

2.5V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR (Parti.

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