* 1.8V power supply.
* LVCMOS compatible with multiplexed address.
* Four banks operation.
* MRS cycle with address key programs. -. CAS latency (1, 2 & 3.

ORDERING INFORMATION Part No. K4M64163PH-R(B)G/F75 K4M64163PH-R(B)G/F90 K4M64163PH-R(B)G/F1L Max Freq. 133MHz(CL3), 83.

The K4M64163PH is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 1,048,576 words by 16 bits, fabricated with SAMSUNG′s high performance CMOS technology. Synchronous design allows precise cycle control with the use of system c.

K4M64163PK

K4M641633K

K4M281633F

K4M281633F-C

K4M281633F-F1L

K4M281633F-G

K4M281633F-L

K4M281633F-N

K4M281633F-RE

K4M28163LF

K4M28163LH

K4M28163PF

K4M28163PF-F75