K4R571669D datasheet by Samsung Semiconductor.
| Part number | K4R571669D |
|---|---|
| Datasheet | K4R571669D_Samsungsemiconductor.pdf |
| File Size | 311.97 KB |
| Manufacturer | Samsung Semiconductor |
| Description | 256/288Mbit RDRAM(D-die) |
|
|
The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to 0.938ns per two bytes (7.5ns per sixteen bytes).
View all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K4R271669A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R271669B | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R271669E | 128Mbit RDRAM(E-die) |
| K4R271669F | 128Mbit RDRAM(F-die) |
| K4R441869A | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R441869B | 256K x 16/18 bit x 32s banks Direct RDRAMTM |
| K4R761869A | 576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
| K4R881869 | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
| K4R881869D | 256/288Mbit RDRAM(D-die) |
| K4R881869M | 288Mbit RDRAM 512K x 18 bit x 2*16 Dependent Banks Direct RDRAMTM |
