K4R571669D - 256/288Mbit RDRAM(D-die)

Samsung semiconductor

K4R571669D Description

K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die) 512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1..
Signal SIO1,SIO0 CMD I/O I/O I Type CMOSa CMOSa # Pins center 2 1 Description Serial input/output.

K4R571669D Features

* for mobile, graphics and large memory systems include power management, byte masking, and x18 organization. The two data bits in the x18 organization are general and can be used for additional storage and bandwidth or for error correction. Direct RDRAM™ SAMSUNG 230 K4RXXXX69D-Fxxx Figure 1: Direc

K4R571669D Applications

* including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MH

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Datasheet Details

Part number: K4R571669D
Manufacturer: Samsung semiconductor
File Size: 311.97 KB
Datasheet: K4R571669D_Samsungsemiconductor.pdf
Description: 256/288Mbit RDRAM(D-die)

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256 288Mbit RDRAMD-die Samsung semiconductor

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