Overview: K4R571669D/K4R881869D Direct RDRAM™ 256/288Mbit RDRAM(D-die)
512K x 16/18bit x 32s banks Direct RDRAMTM Version 1.4 July 2002 Page -1 Version 1.4 July 2002 K4R571669D/K4R881869D
Change History Direct RDRAM™ Version 1.4( July 2002)
- First Copy ( Version 1.4 is named to unify the version of component and device operation datasheets) - Based on the 256/288Mb A-die RDRAM Version 1.4 Page 0 Version 1.4 July 2002 K4R571669D/K4R881869D
Overview
The RDRAM device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The 256/288-Mbit RDRAM devices are extremely highspeed CMOS DRAMs organized as 16M words by 16 or 18 bits. The use of Rambus Signaling Level (RSL) technology permits up to 1066 MHz transfer rates while using conventional system and board design technologies. RDRAM devices are capable of sustained data transfers up to 0.938ns per two bytes (7.5ns per sixteen bytes). The architecture of RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The RDRAM device's 32 banks support up to four simultaneous transactions.
