Datasheet Summary
SDRAM 128Mb F-die (x4, x8, x16)
CMOS SDRAM
128Mb F-die SDRAM Specification m o .c U 4 t e e h S a t a .D w Revision 1.1 w February 2004 w
- Samsung Electronics reserves the right to change products or specification without notice. m o .c U 4 t e e h S a at February 2004 Rev. 1.1 .D w w w
SDRAM 128Mb F-die (x4, x8, x16)
Revision History
Revision 0.0 (Agust, 2003)
- First release. Revision 0.1 (November, 2003)
- pleted DC characteristics. Revision 0.2 (November, 2003)
- Preliminary spec release. Revision 1.0 (January, 2004)
- Revision 1.0 spec release.
- Modified ICC4 current from 110mA -> 140mA at x16
- Modified tSH from 0.8ns -> 1.0ns at 166MHz. Revision 1.1 (February, 2004)
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