K4S510432M Datasheet 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL

Manufacturer: Samsung Semiconductor

K4S510432M 512mbit sdram 32m x 4bit x 4 banks synchronous dram lvttl by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K4S510432M
Manufacturer	Samsung Semiconductor
File Size	104.04 KB
Description	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
Download	K4S510432M Download (PDF)

General Description

The K4S510432M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Overview

K4S510432M Preliminary CMOS SDRAM 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.2 Dec.

2001 Samsung Electronics reserves the right to change products or specification without notice.

Rev.

Key Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K cycle.

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