K4S510432M - 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S510432M
Manufacturer	Samsung semiconductor
File Size	104.04 KB
Description	512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S510432M Datasheet
Additional preview pages of the K4S510432M datasheet.

Product details

Description

The K4S510432M is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits, fabricated with SAMSUNG's high performance CMOS technology.

Features

JEDEC standard 3.3V power supply.
LVTTL compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
DQM for masking.
Auto & self refresh.
64ms refresh period (8K cycle.

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Published: Jul 14, 2007 |