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K4S511533F-YL Datasheet 8M x 16Bit x 4 Banks Mobile SDRAM

Manufacturer: Samsung Semiconductor

Download the K4S511533F-YL datasheet PDF. This datasheet also includes the K4S511533F-YC variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K4S511533F-YC_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The K4S511533F is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Overview

K4S511533F - Y(P)C/L/F 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S511533F-YC 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YF 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPC 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPF 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YPL 8M x 16Bit x 4 Banks Mobile SDRAM
K4S51153LF 8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA
K4S511632B-TC75 512Mb B-die SDRAM Specification
K4S511632B-TCL75 512Mb B-die SDRAM Specification
K4S511632M 512Mbit SDRAM
K4S511632M-TC 512Mbit SDRAM