K4S51323LF-MC - 4M x 32Bit x 4 Banks Mobile SDRAM

Samsung semiconductor

The K4S51323LF-MC by Samsung semiconductor is a 4M x 32Bit x 4 Banks Mobile SDRAM. Below is the official datasheet preview.

📥 Download Datasheet

K4S51323LF-MC 4M x 32Bit x 4 Banks Mobile SDRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4S51323LF-MC** 4M x 32Bit x 4 Banks Mobile SDRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4S51323LF-MC
Manufacturer	Samsung semiconductor
File Size	172.62 KB
Description	4M x 32Bit x 4 Banks Mobile SDRAM
Datasheet	K4S51323LF-MC_Samsungsemiconductor.pdf
Additional preview pages of the K4S51323LF-MC datasheet.

K4S51323LF-MC Product details

Description

The K4S51323LF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

VDD/VDDQ = 2.5V/2.5V or 2.5V/1.8V.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support.

📁 K4S51323LF-MC Similar Datasheet

K4S510432D - 512Mb D-die SDRAM (Samsung)
K4S510832D - 512Mb D-die SDRAM (Samsung)
K4S511632D - 512Mb D-die SDRAM (Samsung)
K4S560432E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S560832E-UC75 - SDRAM 256Mb E-die (Samsung)
K4S561632C - 256Mbit SDRAM (Samsung)
K4S561632E-UC60 - SDRAM 256Mb E-die (Samsung)
K4S561632E-UC75 - SDRAM 256Mb E-die (Samsung)

Other Datasheets by Samsung semiconductor

K4S51323LF-MEC - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEF - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEL - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MF - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-ML - 4M x 32Bit x 4 Banks Mobile SDRAM
K4S513233F-MC - Mobile SDRAM

Published: Apr 12, 2010 |