Datasheet4U Logo Datasheet4U.com

K4S51323PF-MF Datasheet 4M x 32Bit x 4 Banks Mobile-SDRAM

Manufacturer: Samsung Semiconductor

📥 Download Datasheet

General Description

The K4S51323PF is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 4,196,304 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Overview

K4S51323PF-M(E)F 4M x 32Bit x 4 Banks Mobile-SDRAM.

Key Features

  • 1.8V power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR (Partial Array Self Refresh). -. Internal TCSR.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S51323PF-MEF 4M x 32Bit x 4 Banks Mobile-SDRAM
K4S513233F-MC Mobile SDRAM
K4S513233F-MEC Mobile SDRAM
K4S513233F-MEF Mobile SDRAM
K4S513233F-MEL Mobile SDRAM
K4S513233F-MF Mobile SDRAM
K4S513233F-ML Mobile SDRAM
K4S51323LF-MC 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEC 4M x 32Bit x 4 Banks Mobile SDRAM
K4S51323LF-MEF 4M x 32Bit x 4 Banks Mobile SDRAM