K4S643233F-SE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S643233F-SE
Manufacturer	Samsung semiconductor
File Size	90.62 KB
Description	2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
Datasheet	K4S643233F-SE Datasheet
Additional preview pages of the K4S643233F-SE datasheet.

Product details

Description

The K4S643233F is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

3.0V & 3.3 power supply. LVCMOS compatible with multiplexed address. Four banks operation. MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave). All inputs are sampled at the positive going edge of the system clock . Burst read single-bit write operation. DQM for masking. Auto & self refresh. 64ms refresh period (4K cycle). Extended temperature operation (-25°C to.

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Other Datasheets by Samsung semiconductor

K4S643233F-SDE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Published: Mar 25, 2010 |