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K4S643233H-FG Datasheet Mobile-SDRAM

Manufacturer: Samsung Semiconductor

Download the K4S643233H-FG datasheet PDF. This datasheet also includes the K4S643233H-FE variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K4S643233H-FE_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock and I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst lengths and programmable latencies allow the same device to be useful for a variety of high bandwidth and high performance memory system applications.

Overview

K4S643233H - F(H)E/N/G/C/L/F 512K x 32Bit x 4 Banks Mobile SDRAM in.

Key Features

  • 3.0V & 3.3V power supply.
  • LVCMOS compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
  • EMRS cycle with address key programs.
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • Special Function Support. -. PASR.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S643233H-FC Mobile-SDRAM
K4S643233H-FE Mobile-SDRAM
K4S643233H-FF Mobile-SDRAM
K4S643233H-FHC Mobile-SDRAM
K4S643233H-FHE Mobile-SDRAM
K4S643233H-FHG Mobile-SDRAM
K4S643233H-FHL Mobile-SDRAM
K4S643233H-FHN Mobile-SDRAM
K4S643233H-FL Mobile-SDRAM
K4S643233H-FN Mobile-SDRAM