K4S643233H-FHN

The K4S643233H-FHN is Mobile-SDRAM designed by Samsung semiconductor.

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K4S643233H-FHN, K4S643233H-FE
Manufacturer	Samsung semiconductor
File Size	170.23 KB
Description	Mobile-SDRAM
Datasheet	K4S643233H-FE_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K4S643233H-FHN, K4S643233H-FE. Please refer to the document for exact specifications by model.
Additional preview pages of the K4S643233H-FHN datasheet.

Product details

Description

The K4S643233H is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG’s high performance CMOS technology.

Features

3.0V & 3.3V power supply.
LVCMOS compatible with multiplexed address.
Four banks operation.
MRS cycle with address key programs. -. CAS latency (1, 2 & 3). -. Burst length (1, 2, 4, 8 & Full page). -. Burst type (Sequential & Interleave).
EMRS cycle with address key programs.
All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation.
Special Function Support. -. PASR.

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Other Datasheets by Samsung semiconductor

K4S643233H-FHC - Mobile-SDRAM
K4S643233H-FHE - Mobile-SDRAM
K4S643233H-FHG - Mobile-SDRAM
K4S643233H-FHL - Mobile-SDRAM
K4S643233H-FC - Mobile-SDRAM
K4S643233H-FE - Mobile-SDRAM

Published: Mar 25, 2010 |