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K4T1G084QA-ZCE6 Datasheet - Samsung semiconductor

1Gb A-die DDR2 SDRAM Specification

K4T1G084QA-ZCE6 Features

* Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns

* JEDEC standard 1.8V ± 0.1V Power Supply

* VDDQ = 1.8V ± 0.1V

* 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MH

K4T1G084QA-ZCE6 General Description

2.3 Addressing 3. Absolute Maximum Rating 4. AC & DC Operating Conditions & Specifications Page 2 of 28 Rev. 1.1 Aug. 2005 1G A-die DDR2 SDRAM Ordering Information Organization 256Mx4 128Mx8 64Mx16 DDR2-667 5-5-5 K4T1G044QA-ZCE6 K4T1G084QA-ZCE6 K4T1G164QA-ZCE6 DDR2-533 4-4-4 K4T1G044QA-ZCD5 K4T.

K4T1G084QA-ZCE6 Datasheet (654.56 KB)

Preview of K4T1G084QA-ZCE6 PDF

Datasheet Details

Part number:

K4T1G084QA-ZCE6

Manufacturer:

Samsung semiconductor

File Size:

654.56 KB

Description:

1gb a-die ddr2 sdram specification.
1G A-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PRO.

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K4T1G084QA-ZCE6 1Gb A-die DDR2 SDRAM Specification Samsung semiconductor

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