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K4T1G164QA-ZCE6 Datasheet 1Gb A-die DDR2 SDRAM Specification

Manufacturer: Samsung Semiconductor

Download the K4T1G164QA-ZCE6 datasheet PDF. This datasheet also includes the K4T1G164QA variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K4T1G164QA_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

2.3 Addressing 3.

Absolute Maximum Rating 4.

AC & DC Operating Conditions & Specifications Page 2 of 28 Rev.

Overview

1G A-die DDR2 SDRAM www.DataSheet4U.com DDR2 SDRAM 1Gb A-die DDR2 SDRAM Specification Version 1.1 August 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY.

ALL INFORMATION IN THIS DOCUMENT IS PROVIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

Key Features

  • Speed CAS Latency tRCD(min) tRP(min) tRC(min) DDR2-667 5-5-5 5 15 15 54 DDR2-533 4-4-4 4 15 15 55 DDR2-400 3-3-3 3 15 15 55 Units tCK ns ns ns.
  • JEDEC standard 1.8V ± 0.1V Power Supply.
  • VDDQ = 1.8V ± 0.1V.
  • 200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/ pin, 333MHz fCK for 667Mb/sec/pin.
  • 8 Banks.
  • Posted CAS.
  • Programmable CAS Latency: 3, 4, 5.
  • Programmable Additive Latency: 0, 1 , 2 , 3 and 4.
  • Write Latency(WL) = Rea.