K4T51083QE - 512Mb E-die DDR2 SDRAM Specification

Samsung semiconductor

The K4T51083QE by Samsung semiconductor is a 512Mb E-die DDR2 SDRAM Specification. Below is the official datasheet preview.

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K4T51083QE 512Mb E-die DDR2 SDRAM Specification by Samsung semiconductor - Datasheet Preview — Official preview page of the **K4T51083QE** 512Mb E-die DDR2 SDRAM Specification datasheet (Samsung semiconductor).

Datasheet Details

Part number	K4T51083QE
Manufacturer	Samsung semiconductor
File Size	0.98 MB
Description	512Mb E-die DDR2 SDRAM Specification
Datasheet	K4T51083QE_Samsungsemiconductor.pdf
Additional preview pages of the K4T51083QE datasheet.

K4T51083QE Product details

Description

10 5.0 DDR2 SDRAM Addressing 11 6.0 Absolute Maximum DC Ratings 12 7.0 AC & DC Operating Conditions 12 12 7.2 Operating Temperature Condition 13 7.3 Input DC Logic Level 13 7.4 Input AC Logic Level 13 7.5 AC Input Test Conditions 13 7.6 Differential input AC logic Level 14 7.7 Differential AC output parameters 14 8.0 ODT DC electrical characteristics 14 9.0 OCD default characteristics 15 10.0 IDD Specification Parameters and Test Conditions 16 11.0 DDR2 SDRAM IDD Spec 18 12.0 Input/Output capaci

Features

4 3.0 Package Pinout/Mechanical Dimension & Addressing 5 3.1 x4 package pinout (Top View) : 60ball FBGA Package 5 3.2 x8 package pinout (Top View) : 60ball FBGA Package 6 3.3 x16 package pinout (Top View) : 84ball FBGA Package 7 3.4 FBGA Package Dimension(x4/x8) 8 3.5 FBGA Package Dimension(x16) 9 4.0 Input/Output Functional.

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Published: Apr 22, 2010 |