900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




  Samsung Electronic Components Datasheet  

K4X56323PG Datasheet

8M x32 Mobile-DDR SDRAM

No Preview Available !

www.DataSheet4U.com
K4X56323PG - 7(8)E/G
Mobile-DDR SDRAM
8M x32 Mobile-DDR SDRAM
FEATURES
• 1.8V power supply, 1.8V I/O power
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe(DQS)
• Four banks operation
• Differential clock inputs(CK and CK)
MRS cycle with address key programs
- CAS Latency ( 2, 3 )
- Burst Length ( 2, 4, 8, 16 )
- Burst Type (Sequential & Interleave)
- Partial Self Refresh Type ( Full, 1/2, 1/4 Array )
- Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 )
• Internal Temperature Compensated Self Refresh
• Deep Power Down Mode
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
• Data I/O transactions on both edges of data strobe, DM for masking.
• Edge aligned data output, center aligned data input.
• No DLL; CK to DQS is not synchronized.
• DM0 - DM3 for write masking only.
Auto refresh duty cycle
- 15.6us for -25 to 85 °C
Operating Frequency
Speed @CL2*1
Speed @CL3*1
Note :
1. CAS Latency
DDR266
83Mhz
133Mhz
Address configuration
Organization
8M x32
- DM is internally loaded to match DQ and DQS identically.
Bank
BA0,BA1
DDR222
66Mhz
111Mhz
Row
A0 - A11
Column
A0 - A8
Ordering Information
Part No.
K4X56323PG-7(8)E/GC3
K4X56323PG-7(8)E/GCA
Max Freq.
133MHz(CL=3),83MHz(CL=2)
111MHz(CL=3),66MHz(CL=2)
- 7(8)E 90FBGA Pb(Pb Free), Normal Power, Extended Temperature(-25 °C ~ 85 °C)
- 7(8)G : 90 FBGA Pb(Pb Free), Low Power, Extended Temperature(-25 °C ~ 85 °C)
- C3/CA : 133MHz(CL=3)/111MHz(CL=3)
Interface
LVCMOS
Package
90FBGA
Pb (Pb Free)
INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE.
NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,
TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL INFORMATION IN THIS DOCUMENT IS PRO-
VIDED ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.
1. For updates or additional information about Samsung products, contact your nearest Samsung office.
2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where Product failure could
result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or pro-
visions may apply.
January 2006


  Samsung Electronic Components Datasheet  

K4X56323PG Datasheet

8M x32 Mobile-DDR SDRAM

No Preview Available !

www.DataSheet4U.com
K4X56323PG - 7(8)E/G
FUNCTIONAL BLOCK DIAGRAM
Mobile-DDR SDRAM
CK, CK
ADD
CK, CK
Bank Select
32
Data Input Register
Serial to parallel
LWE
LDM
64
1Mx64
1Mx64
1Mx64
1Mx64
64 32
X32
DQi
Column Decoder
Latency & Burst Length
LCKE
LRAS LCBR LWE
LCAS
Programming Register
LWCBR
Data Strobe
LDM
Timing Register
DM Input Register
CK, CK CKE CS RAS CAS WE
DM
January 2006


Part Number K4X56323PG
Description 8M x32 Mobile-DDR SDRAM
Maker Samsung semiconductor
Total Page 23 Pages
PDF Download

K4X56323PG Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 K4X56323PG 8M x32 Mobile-DDR SDRAM
Samsung semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy