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K522H1HACF-B050 - 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM

Description

The K522H1HACF is a Multi Chip Package Memory which combines 2G bit NAND Flash and 1G bit Mobile DDR synchronous Dynamic RAM.

NAND cell provides the most cost-effective solution for the solid state application market.

Features

  • Operating Temperature : -25°C ~ 85°C.
  • Package : 153ball FBGA Type - 8x9x1.0mmt, 0.5mm pitch.
  • Voltage Supply : 1.7V ~ 1.95V.
  • Organization - Memory Cell Array : (256M + 8M) x 8bit for 2Gb (512M + 16M) x 8bit for 4Gb DDP - Data Register : (2K + 64) x 8bit.
  • Automatic Program and Erase - Page Program : (2K + 64)Byte - Block Erase : (128K + 4K)Byte.
  • Page Read Operation - Page Size : (2K + 64)Byte - Random Read : 40μs(Max. ) -.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Rev. 1.0, Oct. 2010 K522H1HACF-B050 MCP Specification 2Gb (128M x16) NAND Flash + 1Gb (64M x16 ) Mobile DDR SDRAM datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise.
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