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K5A3280YBC-T755 Datasheet MCP MEMORY

Manufacturer: Samsung Semiconductor

Download the K5A3280YBC-T755 datasheet PDF. This datasheet also includes the K5A variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (K5A-3380.pdf) that lists specifications for multiple related part numbers.

General Description

The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM.

The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit.

The memory architecture of flash memory is designed to divide its memory arrays into 71 blocks and this provides highly flexible erase and program capability.

Overview

K5A3x80YT(B)C Document Title Multi-Chip Package MEMORY Preliminary MCP MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM Revision History Revision No.

History 0.0 Initial Draft Draft Date November 6, 2002 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics.

SAMSUNG Electronics CO., LTD.

Key Features

  • Power Supply voltage : 2.7V to 3.3V.
  • Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x 16 bit.
  • Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns.
  • Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 22 mA Standby Current : 0.5 µA.
  • Secode(Security Code) B.

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K5A3340YBC-T855 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM