K5A3340YBC-T855, K5A - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM

Samsung semiconductor

The K5A3340YBC-T855 by Samsung semiconductor is a Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM. Below is the official datasheet preview.

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K5A3340YBC-T855 Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM by Samsung semiconductor - Datasheet Preview — Official preview page of the **K5A3340YBC-T855** Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number	K5A3340YBC-T855, K5A
Manufacturer	Samsung semiconductor
File Size	867.47 KB
Description	Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
Datasheet	K5A-3240.pdf
Note	This datasheet PDF includes multiple part numbers: K5A3340YBC-T855, K5A. Please refer to the document for exact specifications by model.
Additional preview pages of the K5A3340YBC-T855 datasheet.

K5A3340YBC-T855 Product details

Description

The K5A3x40YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 4Mbit fCMOS SRAM.

Features

Power Supply voltage : 2.7V to 3.3V.
Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 524,288 x 8 / 262,144 x 16 bit.
Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns.
Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 20 mA Standby Current : 0.5 µA.
Secode(Security Code) Blo.

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Other Datasheets by Samsung semiconductor

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K5A3340YTC-T855 - Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
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Published: Apr 7, 2005 |