• Part: K5A3380YBC-T755
  • Description: MCP MEMORY
  • Manufacturer: Samsung Semiconductor
  • Size: 625.28 KB
K5A3380YBC-T755 Datasheet (PDF) Download
Samsung Semiconductor
K5A3380YBC-T755

Description

The K5A3x80YT(B)C featuring single 3.0V power supply is a Multi Chip Package Memory which combines 32Mbit Dual Bank Flash and 8Mbit fCMOS SRAM. The 32Mbit Flash memory is organized as 4M x8 or 2M x16 bit and 8Mbit SRAM is organized as 1M x8 or 512K x16 bit.

Key Features

  • Power Supply voltage : 2.7V to 3.3V
  • Organization - Flash : 4,194,304 x 8 / 2,097,152 x 16 bit - SRAM : 1,048,576 x 8 / 524,288 x 16 bit
  • Access Time (@2.7V) - Flash : 70 ns, SRAM : 55 ns
  • Power Consumption (typical value) - Flash Read Current : 14 mA (@5MHz) Program/Erase Current : 15 mA Standby mode/Autosleep mode : 5 µA Read while Program or Read while Erase : 25 mA - SRAM Operating Current : 22 mA Standby Current : 0.5 µA
  • Secode(Security Code) Block : Extra 64KB Block (Flash)
  • Block Group Protection / Unprotection (Flash)
  • Flash Bank Size : 8Mb / 24Mb , 16Mb / 16Mb
  • Flash Endurance : 100,000 Program/Erase Cycles Minimum
  • SRAM Data Retention : 1.5 V (min.)
  • Industrial Temperature : -40°C ~ 85°C