K6F2008T2E ram equivalent, 256k x8 bit super low power and low voltage full cmos static ram.
* Process Technology: Full CMOS
* Organization: 256Kx8
* Power Supply Voltage: 2.7 ~ 3.6V
* Low Data Retention Voltage: 1.5V(Min)
* Three State Output.
The K6F2008T2E families are fabricated by SAMSUNG′s advanced Full CMOS process technology. The families support industrial temperature ranges for user flexibility of system design. The families also supports low data retention voltage for battery bac.
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