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K6F8016R6B - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

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Datasheet Details

Part number	K6F8016R6B
Manufacturer	Samsung semiconductor
File Size	141.55 KB
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F8016R6B_Samsungsemiconductor.pdf

K6F8016R6B Product details

Description

The K6F8016R6B families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 512K x16.
Power Supply Voltage: 1.65~2.2V.
Low Data Retention Voltage: 1.0V(Min).
Three State Outputs.
Package Type: 48-TBGA-6.00x7.00 CMOS SRAM www. DataSheet4U. com.

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Published: Apr 23, 2010 |