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K6F8016R6D - 512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Samsung semiconductor

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Datasheet Details

Part number	K6F8016R6D
Manufacturer	Samsung semiconductor
File Size	180.02 KB
Description	512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet	K6F8016R6D_Samsungsemiconductor.pdf

K6F8016R6D Product details

Description

The K6F8016R6D families are fabricated by SAMSUNG′s advanced full CMOS process technology.

Features

Process Technology: Full CMOS.
Organization: 512K x16.
Power Supply Voltage: 1.65~1.95V.
Low Data Retention Voltage: 1.0V(Min).
Three State Outputs.
Package Type: 48-FBGA-6.00x7.00 Preliminary CMOS SRAM www. DataSheet4U. com.

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Published: Apr 23, 2010 |