K6R4004C1D Datasheet - Samsung semiconductor

1Mx4 Bit High Speed Static RAM

K6R4004C1D Features

* Fast Access Time 10ns(Max.)

* Low Power Dissipation Standby (TTL) : 20mA(Max.) (CMOS) : 5mA(Max.) Operating K6R4004C1D-10 : 65mA(Max.) Single 5.0V±10% Power Supply

* TTL Compatible Inputs and Outputs

* Fully Static Operation - No Clock or Refresh required

K6R4004C1D General Description

The K6R4004C1D is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1D uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s adv.

K6R4004C1D Datasheet (248.68 KB)

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Datasheet Details

Part number:

K6R4004C1D

Manufacturer:

Samsung semiconductor

File Size:

248.68 KB

Description:

1mx4 bit high speed static ram.
K6R4004C1D Document Title 1Mx4 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges. PRELIMINARY CMOS .

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K6R4004C1D 1Mx4 Bit High Speed Static RAM Samsung semiconductor

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K6R4004C1D Features

K6R4004C1D General Description

Datasheet Details

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