K6R4008V1B - 512K x8 Bit High Speed Static RAM

Samsung semiconductor

The K6R4008V1B by Samsung semiconductor is a 512K x8 Bit High Speed Static RAM. Below is the official datasheet preview.

Datasheet Details

Part number	K6R4008V1B
Manufacturer	Samsung semiconductor
File Size	182.98 KB
Description	512K x8 Bit High Speed Static RAM
Datasheet	K6R4008V1B_Samsungsemiconductor.pdf
Additional preview pages of the K6R4008V1B datasheet.

The K6R4008V1B is a 4,194,304-bit high-speed Static Random Access Memory organized as 524,288 words by 8 bits.

Fast Access Time 10,12,15ns(Max. ).
Low Power Dissipation Standby (TTL) : 50mA(Max. ) (CMOS) : 10mA(Max. ) 1.2mA(Max. )- L-Ver. Operating K6R4008V1B-10 : 205mA(Max. ) K6R4008V1B-12 : 200mA(Max. ) K6R4008V1B-15 : 195mA(Max. ).
Single 3.3 ±0.3V Power Supply.
TTL Compatible Inputs and Outputs.
Fully Static Operation - No Clock or Refresh required.
Three State Outputs.
2V Minimum Data Retention ; L-Ver. only.
Center Power/Ground Pin C.

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Published: Dec 12, 2007 |