* Fast Access Time 10,12,15ns(Max.)
* Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) 1.2mA(Max.)- L-Ver. Operating K6R4008V1B-10 : 205mA(Max.) K6R4008V1B-12 : 200mA(Max.) K6R4008V1B-15 : 195mA(Max.)
* Single 3.3 ±0.3V Power Supply
* TTL Compatibl
K6R4008V1B Datasheet (182.98 KB)
K6R4008V1B
Samsung semiconductor
182.98 KB
512k x8 bit high speed static ram.
www.DataSheet4U.com PRELIMINARY CMOS SRAM K6R4008V1B-C/B-L, K6R4008V1B-I/B-P Document Title 512Kx8 Bit High Speed Static RAM(3.3V Operating). Operat.
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