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K6T0808U1D - CMOS SRAM

Download the K6T0808U1D datasheet PDF. This datasheet also covers the K6T0808V1D variant, as both devices belong to the same cmos sram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K6T0808V1D-Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K6T0808U1D (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6T0808U1D. For precise diagrams, and layout, please refer to the original PDF.

K6T0808V1D, K6T0808U1D Family Document Title 32Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. 0.0 History Initial draft 1.0 Fin...

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S SRAM Revision History Revision No. 0.0 History Initial draft 1.0 Finalize - Add 70ns part in KM62U256D Family - Show ICC read only, and increased value ICC = 2mA →ICC Read = 5mA - Seperate ICC1 read and write ICC1 = 5mA→ICC1 Read = 5mA, ICC1 Write = 10mA - Improved standby current(ISB1) Commercial part : 10µA→5µA Extended and Industrial part : 20µA→5µA - Improved VIL(Min.) : 0.4V→0.6V - Improved power dissipation : 0.7W→1W Draft Data April 1, 1997 November 12, 1997 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO, LTD. reserve the right to change the specificati

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