* Synchronous Operation.
* 2 Stage Pipelined operation with 4 Burst.
* On-Chip Address Counter.
* Self-Timed Write Cycle.
* On-Chip Address and Control Registers.
* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* 5V Tolerant Inputs Except I/O Pins.
K7A163631B Datasheet (405.57 KB)
K7A163631B
Samsung semiconductor
405.57 KB
18mb b-die sync sram specification 100tqfp with pb / pb-free.
K7A163631B K7A161831B www.DataSheet4U.com 512Kx36 & 1Mx18 Synchronous SRAM 18Mb B-die Sync. SRAM Specification 100TQFP with Pb & Pb-Free (RoHS comp.
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