K7B323625M - 1Mx36 & 2Mx18 Synchronous SRAM

Product Overview

Samsung semiconductor

Datasheet Details

Part number	K7B323625M
Manufacturer	Samsung semiconductor
File Size	304.66 KB
Description	1Mx36 & 2Mx18 Synchronous SRAM
Datasheet	K7B323625M Datasheet
Note	This datasheet PDF includes multiple part numbers: K7B323625M, K7B321825M. Please refer to the document for exact specifications by model.
Additional preview pages of the K7B323625M datasheet.

Product details

Description

The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows.

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Other Datasheets by Samsung semiconductor

K7B323635C - 1Mx36 & 2Mx18 Synchronous SRAM
K7B323635C - 1Mx36 & 2Mx18 Synchronous SRAM
K7B321825M - 1Mx36 & 2Mx18 Synchronous SRAM
K7B321835C - 1Mx36 & 2Mx18 Synchronous SRAM
K7B323635C - 1Mx36 & 2Mx18 Synchronous SRAM
K7B321825M - 1Mx36 & 2Mx18 Synchronous SRAM

Published: Apr 19, 2011 |