K7I161884B Datasheet 512Kx36 & 1Mx18 DDRII CIO b4 SRAM

Manufacturer: Samsung Semiconductor

Overview: K7I163684B K7I161884B 512Kx36 & 1Mx18 DDRII CIO b4 SRAM 18Mb DDRII SRAM Specification 165FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

Download the K7I161884B datasheet PDF. This datasheet also includes the K7I163684B variant, as both parts are published together in a single manufacturer document.

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K7I161884B 512kx36 & 1mx18 ddrii cio b4 sram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K7I161884B
Manufacturer	Samsung Semiconductor
File Size	454.90 KB
Description	512Kx36 & 1Mx18 DDRII CIO b4 SRAM
Download	K7I161884B Download (PDF)

Key Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future frequency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
Pipelined, double-data rate operation.
Common data input/output bus.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed late write.
Registered address, control and data inpu.

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