K7K1636T2C Datasheet 512Kx36 & 1Mx18 DDRII CIO b2 SRAM

Manufacturer: Samsung Semiconductor

Overview: K7K1636T2C K7K1618T2C 512Kx36 & 1Mx18 DDRII+ CIO b2 SRAM 18Mb DDRII+ SRAM Specification 165 FBGA with Pb & Pb-Free (RoHS compliant) INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG.

Download the K7K1636T2C datasheet PDF. This datasheet also includes the K7K1618T2C variant, as both parts are published together in a single manufacturer document.

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K7K1636T2C 512kx36 & 1mx18 ddrii cio b2 sram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K7K1636T2C
Manufacturer	Samsung Semiconductor
File Size	440.53 KB
Description	512Kx36 & 1Mx18 DDRII CIO b2 SRAM
Download	K7K1636T2C Download (PDF)

Key Features

1.8V+0.1V/-0.1V Power Supply.
DLL circuitry for wide output data valid window and future freguency scaling.
I/O Supply Voltage 1.5V+0.1V/-0.1V.
Pipelined, double-data rate operation.
Common data input/output bus.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed late write.
Read latency : 2 clock cycles.
Registered address, control and data input/o.

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