logo

K7N163631B Datasheet, Samsung semiconductor

K7N163631B Datasheet, Samsung semiconductor

K7N163631B

datasheet Download (Size : 603.78KB)

K7N163631B Datasheet

K7N163631B ntram

512kx36 & 1mx18 pipelined ntram.

K7N163631B

datasheet Download (Size : 603.78KB)

K7N163631B Datasheet

K7N163631B Features and benefits


* VDD= 2.5 or 3.3V +/- 5% Power Supply.
* Byte Writable Function.
* Enable clock and suspend operation.
* Single READ/WRITE control pin.
* Self-Timed .

K7N163631B Application

where Product failure could result in loss of life or personal or physical harm, or any military or defense application,.

K7N163631B Description

The K7N163631B and K7N161831B are 18,874,368-bits Synchronous Static SRAMs. The NtRAMTM, or No Turnaround Random Access Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except out.

Image gallery

K7N163631B Page 1 K7N163631B Page 2 K7N163631B Page 3

TAGS

K7N163631B
512Kx36
1Mx18
Pipelined
NtRAM
Samsung semiconductor

Manufacturer


Samsung semiconductor

Related datasheet

K7N163601A

K7N163645A

K7N163201A

K7N163245A

K7N161801A

K7N161831B

K7N161845A

K7N321801M

K7N321831C

K7N321845M

K7N323601M

K7N323631C

K7N323645M

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts