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K7Q161864B Datasheet (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

Manufacturer: Samsung Semiconductor

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K7Q161864B (k7q161864b / k7q163664b) 512kx36 & 1mx18 qdr tm b4 sram by Samsung Semiconductor - Datasheet Preview

Datasheet Details

Part number	K7Q161864B
Manufacturer	Samsung Semiconductor
File Size	370.30 KB
Description	(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
Download	K7Q161864B Download (PDF)

Overview

www.DataSheet4U.com K7Q163664B K7Q161864B Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b4 SRAM Revision History Rev.

No.

0.0 1.0 History 1.

Key Features

1.8V/2.5V +0.1V/-0.1V Power Supply.
I/O Supply Voltage 1.5V +0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
Separate independent read and write data ports with concurrent read and write operation.
HSTL I/O.
Full data coherency, providing most current data.
Synchronous pipeline read with self timed late write.
Registered address, control and data input/output.
DDR(Double Data Rate) Interface on read and write.

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K7Q163654A	(K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163662B	(K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163664B	(K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q163682A	(K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM