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K7Q163664B, K7Q161864B - (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM

The K7Q163664B by Samsung semiconductor is a (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM. Below is the official datasheet preview.

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Official preview page of the K7Q163664B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM datasheet (Samsung semiconductor).

Datasheet Details

Part number K7Q163664B, K7Q161864B
Manufacturer Samsung semiconductor
File Size 370.30 KB
Description (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
Datasheet download datasheet K7Q161864B_Samsungsemiconductor.pdf
Note This datasheet PDF includes multiple part numbers: K7Q163664B, K7Q161864B.
Please refer to the document for exact specifications by model.
Additional preview pages of the K7Q163664B datasheet.

K7Q163664B Product details

Description

Input Clock Input Clocks for Output data Address Inputs Data Inputs Data Outputs Write Control Read Control Byte Write Control Input Reference Voltage Output Driver Impedance Control Power Supply ( 2.5V ) Output Power Supply ( 1.5V or 1.8V ) Ground JTAG Test Mode Select JTAG Test Data Input JTAG Test Clock JTAG Test Data Output No Connect 3 2 1 NOTES Notes: 1. C, C, K or K cannot be set to VREF voltage.2. When ZQ pin is directly connected to VDD output impedance is set to minimum value and it

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