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K8D1716UTC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

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Samsung semiconductor

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K8D1716UTC 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory by Samsung semiconductor - Datasheet Preview — Datasheet preview – K8D1716UTC

Datasheet Details

Part number	K8D1716UTC
Manufacturer	Samsung semiconductor
File Size	1.10 MB
Description	16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
Datasheet	K8D1716UTC Datasheet
Note	This datasheet PDF includes multiple part numbers: K8D1716UTC, K8D1716UBC. Please refer to the document for exact specifications by model.
Additional preview pages of the K8D1716UTC datasheet.

Product details

Description

The K8D1716U featuring single 3.0V power supply, is a 16Mbit NOR-type Flash Memory organized as 2Mx8 or 1M x16.

Features

Single Voltage, 2.7V to 3.6V for Read and Write operations.
Organization 1,048,576 x 16 bit (Word mode).
Fast Read Access Time : 70ns.
Read While Program/Erase Operation.
Dual Bank architectures Bank 1 / Bank 2 : 8Mb / 8Mb.
Secode(Security Code) Block : Extra 64K Byte block.
Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read While Erase Current : 25mA - Standby M.

📁 Similar Datasheet

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Other Datasheets by Samsung semiconductor

K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

Published: Mar 24, 2007 |