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K8D6316UTM Datasheet (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

Manufacturer: Samsung Semiconductor

Download the K8D6316UTM datasheet PDF. This datasheet also includes the K8D6316UBM variant, as both parts are published together in a single manufacturer document.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (K8D6316UBM_Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

General Description

The K8D6

Overview

www.DataSheet4U.com K8D6x16UTM / K8D6x16UBM FLASH MEMORY Document Title 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory Revision History Revision No.

History 0.0 1.0 1.1 Initial Draft Final Specification Revised - Release the stand-by current from typ.

5uA(max.

Key Features

  • Single Voltage, 2.7V to 3.6V for Read and Write operations.
  • Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode).
  • Fast Read Access Time : 70ns.
  • Read While Program/Erase Operation.
  • Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb.
  • Secode(Security Code) Block : Extra 64K Byte block.
  • Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read Whil.