K8D638UTM, K8D6316UBM - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory

Samsung semiconductor

The K8D638UTM by Samsung semiconductor is a (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory. Below is the official datasheet preview.

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K8D638UTM (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory by Samsung semiconductor - Datasheet Preview — Official preview page of the **K8D638UTM** (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory datasheet (Samsung semiconductor).

Datasheet Details

Part number	K8D638UTM, K8D6316UBM
Manufacturer	Samsung semiconductor
File Size	665.39 KB
Description	(K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
Datasheet	K8D6316UBM_Samsungsemiconductor.pdf
Note	This datasheet PDF includes multiple part numbers: K8D638UTM, K8D6316UBM. Please refer to the document for exact specifications by model.
Additional preview pages of the K8D638UTM datasheet.

K8D638UTM Product details

Description

The K8D6316U featuring single 3.0V power supply, is a 64Mbit NOR-type Flash Memory organized as 8Mx8 or 4M x16.

Features

Single Voltage, 2.7V to 3.6V for Read and Write operations.
Organization 8,388,608 x 8 bit (Byte mode) / 4,194,304 x 16 bit (Word mode).
Fast Read Access Time : 70ns.
Read While Program/Erase Operation.
Dual Bank architectures Bank 1 / Bank 2 : 16Mb / 48Mb.
Secode(Security Code) Block : Extra 64K Byte block.
Power Consumption (typical value @5MHz) - Read Current : 14mA - Program/Erase Current : 15mA - Read While Program or Read Whil.

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Other Datasheets by Samsung semiconductor

K8D638UBM - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UBM - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D6316UTM - (K8D6x16UxM) 64M Bit (8M x8/4M x16) Dual Bank NOR Flash Memory
K8D1716UBC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory
K8D1716UTC - 16M Bit (2M x8/1M x16) Dual Bank NOR Flash Memory

Published: Mar 23, 2007 |