Datasheet Details
| Part number | K8P5516UZB |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.66 MB |
| Description | 256Mb B-die NOR FLASH |
| Download | K8P5516UZB Download (PDF) |
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Overview: Rev. 1.3, May. 2010 K8P5516UZB 256Mb B-die NOR FLASH 56TSOP, 64FBGA, Page Mode 2.7V ~ 3.6V http://www.DataSheet4U.net/ datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. ⓒ 2010 Samsung Electronics Co., Ltd. All rights reserved. -1datasheet pdf - http://www.DataSheet4U.net/ K8P5516UZB-P(E)/I(C)(E)/4E datasheet History Rev. 1.3 NOR FLASH MEMORY Revision History Revision No. 0.0 0.
| Part number | K8P5516UZB |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 1.66 MB |
| Description | 256Mb B-die NOR FLASH |
| Download | K8P5516UZB Download (PDF) |
|
|
|
of Hardwre Protection in Figure 8: Enhanced Block Protection/Unprotection is changed from"A outermost block on both ends of flash array locked" to "Highest or lowest block locked" DC Characteristics Table is revised.
- "Read While Program Current"(I2) and "Read While Erase Current"(I3) are deleted.
- "WP/ACC Input Leakage Current" is changed to "A9 Input Leakage Current".
| Part Number | Description |
|---|---|
| K8P5616UZB | 256Mb B-die Page NOR FLASH |
| K8P2716UZC | 128Mb C-die Page NOR Flash |
| K8P2815UQC | 128Mb C-die NOR FLASH |