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K91G08Q0M Datasheet, Samsung semiconductor

K91G08Q0M Datasheet, Samsung semiconductor

K91G08Q0M

datasheet Download (Size : 173.90KB)

K91G08Q0M Datasheet

K91G08Q0M memory equivalent, 128m x 8 bit / 64m x 16 bit nand flash memory.

K91G08Q0M

datasheet Download (Size : 173.90KB)

K91G08Q0M Datasheet

Features and benefits

D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into .

Application

Programmable logic controllers, modems, answering machines, general applications 14925 Features D Endstackable to 2.54 .

Description

The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, provi.

Image gallery

K91G08Q0M Page 1 K91G08Q0M Page 2 K91G08Q0M Page 3

TAGS

K91G08Q0M
128M
Bit
64M
Bit
NAND
Flash
Memory
Samsung semiconductor

Manufacturer


Samsung semiconductor

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