K91G08Q0M - 128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

Description

The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package.

Features

D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups Coll. Emitter D Low temperature coefficient of CTR D Wide ambient temperature range D Underwriters Laboratory (UL) 1577 recognized, file number E-76222 Anode Cath. 4 PIN 8 PIN 16 PIN D CSA (C.
UL) 1577 recognized, file number E-76222.
Double Protection D Coupling System U C Order Instruction Orderi.

Samsung Semiconductor

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Datasheet Details

Part number	K91G08Q0M
Manufacturer	Samsung Semiconductor
File Size	173.90 KB
Description	128M x 8 Bit / 64M x 16 Bit NAND Flash Memory
Datasheet	K91G08Q0M Datasheet
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K817P/ K827PH/ K847PH Vishay Telefunken Optocoupler with Phototransistor Output Description The K817P/ K827PH/ K847PH consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 4-lead up to 16-lead plastic dual inline package. The elements are mounted on one leadframe using a coplanar technique, providing a fixed distance between input and output for highest safety requirements. Applications Programmable logic controllers, modems, answering machines, general applications 14925 Features D Endstackable to 2.54 mm (0.1’) spacing D DC isolation test voltage VIO = 5 kV D Low coupling capacitance of typical 0.3 pF D Current Transfer Ratio (CTR) selected into groups Coll.

Published: Apr 7, 2005 |